Journal: Light, Science & Applications

Article Title: Highly-efficient (>70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors

doi: 10.1038/s41377-024-01652-6

Figure Lengend Snippet: a Schematics of conventional Fabry-Perot resonance cavity and proposed GMR structure. b Design of GMR integrated InGaAs PD structures and design parameters of GMR structure. c 2D mapping results for the relative amount of absorption in AL grating period as a function of wavelength with fixed T AL = 1 μm. d RCWA simulation results with 1 μm AL PD on rear side engineering about InP substrate, flat metal structure, and GMR structure. e Electric field intensity distribution for 1.0 μm AL InGaAs PIN PDs on different bottom structures at 0.6 μm and 1.5 μm. f T AL dependent absorption spectra in terms of wavelength. g Top InGaAs layer thickness-dependent absorption spectra for visible light absorption

Article Snippet: The cross-sectional SEM images of the 0.49 μm and 0.98 μm T AL InGaAs PD (slight deviation from the target growth thickness, defined as 0.5 μm and 1 μm AL InGaAs PD) on Si with the GMR integration process are depicted in Fig. .

Techniques:

Journal: Light, Science & Applications

Article Title: Highly-efficient (>70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors

doi: 10.1038/s41377-024-01652-6

Figure Lengend Snippet: a Schematics of the GMR integrated InGaAs PDs by utilizing wafer bonding based thin film transfer method b Photograph of wafer-level patterned GMR structure with 1.5 μm period. c SEM image for periodic patterns consisting of Au width of 0.75 μm and TiO x 0.75 μm. d Schematic image of the fabricated PD on GMR structure and optical image of fabricated devices. e EDX images of Ti, O, and Au atoms at the top view. f Fabricated 0.5 μm and 1.0 μm AL InGaAs PD on GMR Si structure

Article Snippet: The cross-sectional SEM images of the 0.49 μm and 0.98 μm T AL InGaAs PD (slight deviation from the target growth thickness, defined as 0.5 μm and 1 μm AL InGaAs PD) on Si with the GMR integration process are depicted in Fig. .

Techniques:

Journal: Light, Science & Applications

Article Title: Highly-efficient (>70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors

doi: 10.1038/s41377-024-01652-6

Figure Lengend Snippet: a Schematics of the fabricated device structures with different bottom structures. b I – V characteristics for 1.0 μm AL InGaAs PD on InP, flat metal, GMR, and ideality factors as an inset figure ( c ) Surface leakage currents for 1 μm AL InGaAs PD with/without SU-8 passivation using size dependency. d I ph – P in characteristics for 0.5 and 1 μm AL PDs on GMR Si. e Calculated f 3dB for 15 × 15 μm 2 devices in terms of T AL . f Calculated f 3dB as a function of device width to confirm the transit time limited bandwidth

Article Snippet: The cross-sectional SEM images of the 0.49 μm and 0.98 μm T AL InGaAs PD (slight deviation from the target growth thickness, defined as 0.5 μm and 1 μm AL InGaAs PD) on Si with the GMR integration process are depicted in Fig. .

Techniques:

Journal: Light, Science & Applications

Article Title: Highly-efficient (>70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors

doi: 10.1038/s41377-024-01652-6

Figure Lengend Snippet: a EQE spectra for fabricated PDs on InP substrate with different T AL . b EQE spectra for fabricated 1 μm AL PDs on different bottom structures. c Resulting EQE spectra for different T AL on GMR structure and reference 2.1 μm AL PDs on InP substrate. d Calculated current density using EQE spectrum as a function of T AL and structures. e Comparison of normalized performances of EQE per T AL for proposed devices and conventional PDs. f Fabricated devices with/without 20 nm surface InGaAs layer for 1 μm AL PDs on GMR Si. g Benchmark for state-of-the-art InGaAs-based SWIR pixels with simulated EQE lines as a function of T AL variation (Dashed line: InGaAs PD on InP substrate, dotted line: InGaAs PD on flat metal structure, with the same ARC of this experiment)

Article Snippet: The cross-sectional SEM images of the 0.49 μm and 0.98 μm T AL InGaAs PD (slight deviation from the target growth thickness, defined as 0.5 μm and 1 μm AL InGaAs PD) on Si with the GMR integration process are depicted in Fig. .

Techniques: Comparison